Datasheets
2A400HB12C2F by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for 2A400HB12C2F by Infineon Technologies AG

Overview of 2A400HB12C2F by Infineon Technologies AG

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Part Details for 2A400HB12C2F

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2A400HB12C2F Part Data Attributes

2A400HB12C2F Infineon Technologies AG
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2A400HB12C2F Infineon Technologies AG Insulated Gate Bipolar Transistor,
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 565 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2100 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 550 ns
Turn-on Time-Nom (ton) 200 ns
VCEsat-Max 2.25 V

Alternate Parts for 2A400HB12C2F

This table gives cross-reference parts and alternative options found for 2A400HB12C2F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2A400HB12C2F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APTGL475A120D3G Insulated Gate Bipolar Transistor, 610A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc 2A400HB12C2F vs APTGL475A120D3G

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