Part Details for 2MBI100N-120 by Fuji Electric Co Ltd
Overview of 2MBI100N-120 by Fuji Electric Co Ltd
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for 2MBI100N-120
2MBI100N-120 CAD Models
2MBI100N-120 Part Data Attributes
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2MBI100N-120
Fuji Electric Co Ltd
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Datasheet
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2MBI100N-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M234, 7 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT | |
Fall Time-Max (tf) | 500 ns | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1600 W | |
Power Dissipation-Max (Abs) | 800 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 850 ns | |
Turn-on Time-Nom (ton) | 650 ns | |
VCEsat-Max | 3.3 V |
Alternate Parts for 2MBI100N-120
This table gives cross-reference parts and alternative options found for 2MBI100N-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI100N-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MG150Q2YS1 | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100N-120 vs MG150Q2YS1 |
MG100Q2YS42 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100N-120 vs MG100Q2YS42 |
MG150Q2YS11 | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100N-120 vs MG150Q2YS11 |
1MBI200S-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | 2MBI100N-120 vs 1MBI200S-120 |
MG100Q2YS50A | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100N-120 vs MG100Q2YS50A |
MG200Q2YS50 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100N-120 vs MG200Q2YS50 |
APTGT200U120D4 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 | Microsemi Corporation | 2MBI100N-120 vs APTGT200U120D4 |
2MBI200SB-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 2MBI100N-120 vs 2MBI200SB-120 |
BSM100GB120DN2 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN | Infineon Technologies AG | 2MBI100N-120 vs BSM100GB120DN2 |
MG300N1US1 | TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI100N-120 vs MG300N1US1 |