Datasheets
2MBI150VB-120-50 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor

Part Details for 2MBI150VB-120-50 by Fuji Electric Co Ltd

Overview of 2MBI150VB-120-50 by Fuji Electric Co Ltd

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Part Details for 2MBI150VB-120-50

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2MBI150VB-120-50 Part Data Attributes

2MBI150VB-120-50 Fuji Electric Co Ltd
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2MBI150VB-120-50 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor
Part Life Cycle Code Active
Ihs Manufacturer FUJI ELECTRIC CO LTD
Package Description FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 600 ns

Alternate Parts for 2MBI150VB-120-50

This table gives cross-reference parts and alternative options found for 2MBI150VB-120-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI150VB-120-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MG300N1US1 TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150VB-120-50 vs MG300N1US1
2MBI150NB-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd 2MBI150VB-120-50 vs 2MBI150NB-120
CM600HA-24H Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel Mitsubishi Electric 2MBI150VB-120-50 vs CM600HA-24H
MG100Q2YS50 TRANSISTOR IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150VB-120-50 vs MG100Q2YS50
MG300Q1US2 TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150VB-120-50 vs MG300Q1US2
CM150DU-24H Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors 2MBI150VB-120-50 vs CM150DU-24H
1MBI200S-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd 2MBI150VB-120-50 vs 1MBI200S-120
CM150DY-24T Insulated Gate Bipolar Transistor, Mitsubishi Electric 2MBI150VB-120-50 vs CM150DY-24T
MG500Q1US1 TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150VB-120-50 vs MG500Q1US1
MG100Q2YS40 TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150VB-120-50 vs MG100Q2YS40

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