Part Details for 2N3637 by TT Electronics Power and Hybrid / Semelab Limited
Overview of 2N3637 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N3637
2N3637 CAD Models
2N3637 Part Data Attributes
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2N3637
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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2N3637
TT Electronics Power and Hybrid / Semelab Limited
1000mA, 175V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | BCY | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 175 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| JEDEC-95 Code | TO-205AD | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| Turn-off Time-Max (toff) | 600 ns | |
| Turn-on Time-Max (ton) | 400 ns |
Alternate Parts for 2N3637
This table gives cross-reference parts and alternative options found for 2N3637. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3637, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N3637 | Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN | CRYSTALONICS Inc | 2N3637 vs 2N3637 |
| JANTX2N3637 | 1000mA, 175V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN | Motorola Mobility LLC | 2N3637 vs JANTX2N3637 |
| 2N3637-JQR-B | 1000mA, 175V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N3637 vs 2N3637-JQR-B |
| JANTX2N3637 | MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-39 3-Lead, 100-BLKBX, Military Qualified | onsemi | 2N3637 vs JANTX2N3637 |
| JANTXV2N3637 | 1000mA, 175V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN | Motorola Mobility LLC | 2N3637 vs JANTXV2N3637 |
| JAN2N3637 | Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN | New England Semiconductor | 2N3637 vs JAN2N3637 |
| JANTXV2N3637 | Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN | CRYSTALONICS Inc | 2N3637 vs JANTXV2N3637 |
| JANTX2N3637 | Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN | CRYSTALONICS Inc | 2N3637 vs JANTX2N3637 |
| JANTX2N3637L | Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN | Semicoa Semiconductors | 2N3637 vs JANTX2N3637L |
| JAN2N3637 | Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, | Raytheon Semiconductor | 2N3637 vs JAN2N3637 |