Part Details for 2N3866 by Microchip Technology Inc
Overview of 2N3866 by Microchip Technology Inc
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Applications
Consumer Electronics
Audio and Video Systems
Renewable Energy
Entertainment and Gaming
Part Details for 2N3866
2N3866 CAD Models
2N3866 Part Data Attributes
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2N3866
Microchip Technology Inc
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2N3866
Microchip Technology Inc
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39
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Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
Collector Current-Max (IC) | 0.4 A | |
Collector-Base Capacitance-Max | 3.5 pF | |
Collector-Emitter Voltage-Max | 30 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Gain-Min (Gp) | 10 dB | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 800 MHz | |
VCEsat-Max | 1 V |