Part Details for 2N4060TIN/LEAD by Central Semiconductor Corp
Overview of 2N4060TIN/LEAD by Central Semiconductor Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
DE6B3KJ151KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
DE6B3KJ471KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
DE6E3KJ152MN4A | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
Part Details for 2N4060TIN/LEAD
2N4060TIN/LEAD CAD Models
2N4060TIN/LEAD Part Data Attributes
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2N4060TIN/LEAD
Central Semiconductor Corp
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Datasheet
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2N4060TIN/LEAD
Central Semiconductor Corp
Small Signal Bipolar Transistor,
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.2 A | |
Collector-Emitter Voltage-Max | 30 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 45 | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.625 W | |
Power Dissipation-Max (Abs) | 0.625 W | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
VCEsat-Max | 0.7 V |