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Overview of 2N5056TIN/LEAD by Central Semiconductor Corp
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
DE6B3KJ151KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
DE6B3KJ471KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
DE6E3KJ152MN4A | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
CAD Models for 2N5056TIN/LEAD by Central Semiconductor Corp
Part Data Attributes for 2N5056TIN/LEAD by Central Semiconductor Corp
|
|
---|---|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
CENTRAL SEMICONDUCTOR CORP
|
Package Description
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.21.00.75
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Date Of Intro
|
2018-10-31
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Collector Current-Max (IC)
|
0.2 A
|
Collector-Base Capacitance-Max
|
4.5 pF
|
Collector-Emitter Voltage-Max
|
15 V
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Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
20
|
JEDEC-95 Code
|
TO-18
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JESD-30 Code
|
O-MBCY-W3
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Number of Elements
|
1
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Number of Terminals
|
3
|
Operating Temperature-Max
|
200 °C
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Operating Temperature-Min
|
-65 °C
|
Package Body Material
|
METAL
|
Package Shape
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ROUND
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Package Style
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CYLINDRICAL
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
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Polarity/Channel Type
|
PNP
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Power Dissipation Ambient-Max
|
0.5 W
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Power Dissipation-Max (Abs)
|
1.2 W
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Surface Mount
|
NO
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Terminal Form
|
WIRE
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Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
600 MHz
|
Turn-off Time-Max (toff)
|
35 ns
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Turn-on Time-Max (ton)
|
20 ns
|
VCEsat-Max
|
0.45 V
|