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Transistors Power Field-Effect Transistors 2N6659

Transistors
2N6659
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Overview of 2N6659 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for 2N6659 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   10
RFQ
Bristol Electronics   Min Qty: 1 8
  • 1 $6.7200
  • 5 $4.3680
$4.3680 / $6.7200 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 140
  • 1 $77.7888
  • 31 $62.2310
  • 81 $60.2863
$60.2863 / $77.7888 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 35
  • 1 $4.4400
  • 8 $3.2560
  • 24 $2.9600
$2.9600 / $4.4400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 6
  • 1 $9.0000
  • 2 $6.0000
  • 5 $4.5000
$4.5000 / $9.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 5
  • 1 $4.4400
  • 3 $3.7000
$3.7000 / $4.4400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 1
  • 1 $4.4400
$4.4400 Buy Now
ComSIT USA N-CHANNEL ENHANCEMENT-MODE MOSFET TRANSISTOR Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD RoHS: Not Compliant Stock EU - 100
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

CAD Models for 2N6659 by Vishay Siliconix
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Part Data Attributes for 2N6659 by Vishay Siliconix
Parametric Data

2N6659
Vishay Siliconix
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
SILICONIX INC
Part Package Code
BCY
Pin Count
2
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Configuration
SINGLE
Drain Current-Max (ID)
2 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
6.25 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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  1. 2N6659
    Vishay Siliconix
    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Alternate Parts for 2N6659

This table gives cross-reference parts and alternative options found for 2N6659. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6659, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6659 Small Signal Field-Effect Transistor, 1-Element, Silicon, TO-39, TT Electronics Resistors 2N6659 vs 2N6659
2N6659 Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Supertex Inc 2N6659 vs 2N6659
2N6659 Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Vishay Intertechnologies 2N6659 vs 2N6659
2N6659 Si, SMALL SIGNAL, FET, TO-39 TT Electronics Power and Hybrid / Semelab Limited 2N6659 vs 2N6659
2N6659 TRANSISTOR 1400 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39, TO-39, 3 PIN, FET General Purpose Small Signal NXP Semiconductors 2N6659 vs 2N6659
Part Number Description Manufacturer Compare
2SK3335TP 8000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TP, 3 PIN SANYO Electric Co Ltd 2N6659 vs 2SK3335TP
VN2210N2 Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc 2N6659 vs VN2210N2
BST82 175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET NXP Semiconductors 2N6659 vs BST82
FDA24N50F Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PN, 3 PIN Fairchild Semiconductor Corporation 2N6659 vs FDA24N50F
FDN359BN Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation 2N6659 vs FDN359BN
VP0210N2 Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc 2N6659 vs VP0210N2
TN2106K1-G Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 Supertex Inc 2N6659 vs TN2106K1-G
TP2104K1-G Small Signal Field-Effect Transistor, 0.16A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 Supertex Inc 2N6659 vs TP2104K1-G
BS170 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN Fairchild Semiconductor Corporation 2N6659 vs BS170
TP0606N3-G Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc 2N6659 vs TP0606N3-G

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