Part Details for 2N6661 by Microchip Technology Inc
Results Overview of 2N6661 by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N6661 Information
2N6661 by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N6661
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
44AC3447
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Newark | Mosfet, N-Ch, 90V, 1.5A, To-39-3, Transistor Polarity:N Channel, Continuous Drain Current Id:1.5A, Drain Source Voltage Vds:90V, On Resistance Rds(On):4Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Microchip 2N6661 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 51 |
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$14.0400 / $15.9000 | Buy Now |
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DISTI #
2N6661
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Avnet Americas | - Tape and Reel (Alt: 2N6661) COO: Thailand RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 6 Weeks, 0 Days Container: Reel | 494 |
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$12.8021 / $13.2507 | Buy Now |
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DISTI #
2N6661
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Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm, TO-39, Projected EOL: 2034-01-12 COO: Thailand ECCN: EAR99 RoHS: Compliant Lead time: 6 Weeks, 0 Days Container: Bag | In Stock: 0 and Alternates Available |
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$11.5400 / $15.9000 | Buy Now |
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DISTI #
70452128
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RS | MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 OHM3 TO-39 BAG Min Qty: 500 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Bulk | 0 |
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$15.1600 / $16.8500 | RFQ |
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DISTI #
2N6661
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TME | Transistor: N-MOSFET, unipolar, 90V, 350mA, Idm: 3A, TO39 Min Qty: 1 | 0 |
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$16.3900 / $17.8000 | RFQ |
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NAC | MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm. - VHV ANALOG Product Line RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Bag | 0 |
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$13.7000 / $16.0400 | Buy Now |
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DISTI #
2N6661
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Avnet Silica | (Alt: 2N6661) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
2N6661
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EBV Elektronik | (Alt: 2N6661) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 7 Weeks, 0 Days | EBV - 0 |
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Buy Now |
US Tariff Estimator: 2N6661 by Microchip Technology Inc
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for 2N6661
2N6661 CAD Models
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2N6661 Part Data Attributes
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2N6661
Microchip Technology Inc
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Datasheet
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2N6661
Microchip Technology Inc
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TO-39, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-39-3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.39.00.01 | |
| Factory Lead Time | 6 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 90 V | |
| Drain Current-Max (ID) | 0.35 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 6.25 W | |
| Power Dissipation-Max (Abs) | 6.25 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | TS 16949 | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL GOLD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 10 ns | |
| Turn-on Time-Max (ton) | 10 ns |
2N6661 Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the 2N6661 is 4.5V to 18V.
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To ensure the 2N6661 is properly biased for linear operation, make sure the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V higher than the base-emitter voltage.
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The maximum collector current rating for the 2N6661 is 500mA.
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To protect the 2N6661 from thermal overload, ensure the device is properly heat-sinked, and the ambient temperature is within the recommended operating range of -55°C to 150°C.
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Yes, the 2N6661 can be used as a switch, but it's not recommended due to its relatively low current gain and high saturation voltage. A dedicated switching transistor like the 2N3904 or 2N3906 would be a better choice.