Part Details for 2N6661 by Thales Group
Overview of 2N6661 by Thales Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N6661
2N6661 CAD Models
2N6661 Part Data Attributes
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2N6661
Thales Group
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Datasheet
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2N6661
Thales Group
Power Field-Effect Transistor, 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | THOMSON-CSF SEMICONDUCTORS | |
Part Package Code | TO-39 | |
Package Description | TO-39, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
DS Breakdown Voltage-Min | 90 V | |
Drain-source On Resistance-Max | 4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for 2N6661
This table gives cross-reference parts and alternative options found for 2N6661. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6661, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6661 | Power Field-Effect Transistor, 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | Unitrode Corp (RETIRED) | 2N6661 vs 2N6661 |
2N6661 | Power Field-Effect Transistor, 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | Solitron Devices Inc | 2N6661 vs 2N6661 |
2N6661 | Power Field-Effect Transistor, 2A I(D), 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | Unitrode Corporation | 2N6661 vs 2N6661 |
2N6661 | Power Field-Effect Transistor, 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | Microsemi Corporation | 2N6661 vs 2N6661 |