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2N6756

Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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Price Range $2.8100

Part Details

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Distributors with Stock

Total Inventory

1,128

Part Number Description Manufacturer Compare
IRF130 Transistors Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG 2N6756 vs IRF130
JANTX2N6756 Transistors Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG 2N6756 vs JANTX2N6756
2N6756 Transistors 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC 2N6756 vs 2N6756
Part Number Description Manufacturer Compare
2N6756 Transistors 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC 2N6756 vs 2N6756
2N6758 Transistors 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC 2N6756 vs 2N6758
IRF140 Transistors Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier 2N6756 vs IRF140
IRF230 Transistors Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG 2N6756 vs IRF230
JANTX2N6758 Transistors Power Field-Effect Transistor, 9A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Vishay Siliconix 2N6756 vs JANTX2N6758
JANTX2N6756 Transistors Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG 2N6756 vs JANTX2N6756
IRF1404ZSPBF Transistors Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG 2N6756 vs IRF1404ZSPBF
IRF130 Transistors Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG 2N6756 vs IRF130
IRF1404ZSTRLPBF Transistors Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG 2N6756 vs IRF1404ZSTRLPBF
IRF220 Transistors 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC 2N6756 vs IRF220

Global Popularity

Popularity in Transistors

Popularity in Power Field-Effect Transistors

Popularity by Region

Very High

Medium

Good

Low

  • 1. Mexico
    100
  • 2. Peru
    98
  • 3. United Kingdom
    98
  • 4. India
    98
  • 5. United States
    98
  • 6. Singapore
    96
  • 7. Brazil
    96
  • 8. Uzbekistan
    96
  • 9. Russia
    95
  • 10. Taiwan
    95

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Estimated Stock History

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