Purchasing Risk Rank is determined by in-depth analysis across risk factors of production risk and long term risk of a given part.
2N6758
Obsolete
TO-3
FLANGE MOUNT, O-MBFM-P2
2
compliant
EAR99
Microsemi Corporation
5.26
HIGH RELIABILITY
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
9 A
9 A
0.49 Ω
METAL-OXIDE SEMICONDUCTOR
TO-204AA
O-MBFM-P2
1
2
ENHANCEMENT MODE
150 °C
METAL
ROUND
Design Risk Rank is determined by in-depth analysis across risk factors, including part availability, functional equivalents, lifecycle, and more.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF141 Transistors | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | 2N6758 vs IRF141 |
IRF233R Transistors | 8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N6758 vs IRF233R |
IRF1302LPBF Transistors | Power Field-Effect Transistor, 174A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | 2N6758 vs IRF1302LPBF |
IRF122 Transistors | 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N6758 vs IRF122 |
IRF133 Transistors | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Samsung Semiconductor | 2N6758 vs IRF133 |
IRF230R Transistors | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | 2N6758 vs IRF230R |
IRF230-JQR-B Transistors | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6758 vs IRF230-JQR-B |
IRF1302LTRL Transistors | Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | 2N6758 vs IRF1302LTRL |
IRF130R Transistors | 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N6758 vs IRF130R |
IRF230EBPBF Transistors | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | 2N6758 vs IRF230EBPBF |