There are no models available for this part yet.
Overview of 2N6759R1 by TT Electronics Resistors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2N6759R1 by TT Electronics Resistors
Part Data Attributes for 2N6759R1 by TT Electronics Resistors
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|---|---|
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Rohs Code
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Yes
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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TT ELECTRONICS PLC
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Package Description
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FLANGE MOUNT, O-MBFM-P2
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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350 V
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Drain Current-Max (ID)
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4.5 A
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Drain-source On Resistance-Max
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1.5 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-3
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JESD-30 Code
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O-MBFM-P2
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JESD-609 Code
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e1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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METAL
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Package Shape
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ROUND
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
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TIN SILVER COPPER
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Terminal Form
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PIN/PEG
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Terminal Position
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BOTTOM
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Transistor Element Material
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SILICON
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Alternate Parts for 2N6759R1
This table gives cross-reference parts and alternative options found for 2N6759R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6759R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6759 | Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | 2N6759R1 vs 2N6759 |
| 2N6759 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,4.5A I(D),TO-3 | Intersil Corporation | 2N6759R1 vs 2N6759 |
| 2N6759 | 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | 2N6759R1 vs 2N6759 |
| IRF333 | 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | 2N6759R1 vs IRF333 |
| IRF333 | Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | 2N6759R1 vs IRF333 |
| 2N6759R1 | 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6759R1 vs 2N6759R1 |
| 2N6759 | Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corporation | 2N6759R1 vs 2N6759 |
| IRF333 | 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | 2N6759R1 vs IRF333 |
| 2N6759 | 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6759R1 vs 2N6759 |
| UFN333 | Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | 2N6759R1 vs UFN333 |