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Transistors Power Field-Effect Transistors 2N6764

2N6764
Description: 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

Overview of 2N6764 by TT Electronics Power and Hybrid / Semelab Limited

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Part Data Attributes for 2N6764 by TT Electronics Power and Hybrid / Semelab Limited
Parametric Data

2N6764
TT Electronics Power and Hybrid / Semelab Limited
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SEMELAB LTD
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
38 A
Drain-source On Resistance-Max
0.055 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Want to compare parts?
  1. 2N6764
    TT Electronics Power and Hybrid / Semelab Limited
    38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
    VS

Alternate Parts for 2N6764

This table gives cross-reference parts and alternative options found for 2N6764. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6764, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN Microsemi Corporation 2N6764 vs 2N6764
IRF150-JQR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6764 vs IRF150-JQR-BR1
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp 2N6764 vs JANTX2N6764
IRF150R1 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors 2N6764 vs IRF150R1
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) 2N6764 vs JANTXV2N6764
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) 2N6764 vs JANTX2N6764
IRF150-JQR-BR1 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors 2N6764 vs IRF150-JQR-BR1
2N6764-QR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6764 vs 2N6764-QR-BR1
IRF152 Power Field-Effect Transistor, 33A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation 2N6764 vs IRF152
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation 2N6764 vs 2N6764
Part Number Description Manufacturer Compare
IRF152 40A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6764 vs IRF152
BUZ24 Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors 2N6764 vs BUZ24
MTM25N10 25A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC 2N6764 vs MTM25N10
IRF034PBF Power Field-Effect Transistor, 25A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier 2N6764 vs IRF034PBF
IRF150 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors 2N6764 vs IRF150
JANTXV2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Defense Logistics Agency 2N6764 vs JANTXV2N6764
IRF151 Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor 2N6764 vs IRF151
IRF034 25A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC 2N6764 vs IRF034
IRF153 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6764 vs IRF153
IRF153 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics 2N6764 vs IRF153

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