Datasheets
2N6765 by:

Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

Part Details for 2N6765 by TT Electronics Resistors

Overview of 2N6765 by TT Electronics Resistors

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Applications Industrial Automation Motor control systems

Part Details for 2N6765

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2N6765 Part Data Attributes:

2N6765 TT Electronics Resistors
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2N6765 TT Electronics Resistors Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for 2N6765

This table gives cross-reference parts and alternative options found for 2N6765. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6765, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF253 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor 2N6765 vs IRF253
IRF253 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Littelfuse Inc 2N6765 vs IRF253
2N6765 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor 2N6765 vs 2N6765
2N6765R1 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6765 vs 2N6765R1
2N6765 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited 2N6765 vs 2N6765
UFN253 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) 2N6765 vs UFN253
2N6765 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) 2N6765 vs 2N6765
IRF253 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC 2N6765 vs IRF253
IRF253 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier 2N6765 vs IRF253
IRF250 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier 2N6765 vs IRF250
Part Number Description Manufacturer Compare
IRF251 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Littelfuse Inc 2N6765 vs IRF251
IRF252 Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Harris Semiconductor 2N6765 vs IRF252
JANTXV2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) 2N6765 vs JANTXV2N6766
JANTX2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor 2N6765 vs JANTX2N6766
IRF251 30A, 150V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation 2N6765 vs IRF251
IRF253 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor 2N6765 vs IRF253
IRF250-JQR-B Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors 2N6765 vs IRF250-JQR-B
UFN252 Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) 2N6765 vs UFN252
2N6766-JQRR1 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors 2N6765 vs 2N6766-JQRR1
2N6766R1 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors 2N6765 vs 2N6766R1

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