Datasheets
2N6794TXV by:

Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for 2N6794TXV by Fairchild Semiconductor Corporation

Overview of 2N6794TXV by Fairchild Semiconductor Corporation

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Applications Industrial Automation

Part Details for 2N6794TXV

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2N6794TXV Part Data Attributes:

2N6794TXV Fairchild Semiconductor Corporation
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2N6794TXV Fairchild Semiconductor Corporation Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature RADIATION HARDENED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 6.5 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N6794TXV

This table gives cross-reference parts and alternative options found for 2N6794TXV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6794TXV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6794TXV Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier 2N6794TXV vs 2N6794TXV
2N6794 Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) 2N6794TXV vs 2N6794
2N6794TX 1.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6794TXV vs 2N6794TX
2N6794 Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor 2N6794TXV vs 2N6794
JANTX2N6794 1.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6794TXV vs JANTX2N6794
IRFF420 1.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6794TXV vs IRFF420
2N6794 Power Field-Effect Transistor, 1.5A I(D), 500V, 3.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors 2N6794TXV vs 2N6794
2N6794 Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Infineon Technologies AG 2N6794TXV vs 2N6794
IRFF420R1 Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6794TXV vs IRFF420R1
IRFF420 Power Field-Effect Transistor, 1.5A I(D), 500V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier 2N6794TXV vs IRFF420
Part Number Description Manufacturer Compare
2N6794TXV 1.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6794TXV vs 2N6794TXV
IRFF420R1 1.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6794TXV vs IRFF420R1
IRFF420 1.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6794TXV vs IRFF420
2N6794 1.5A, 500V, 3.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6794TXV vs 2N6794
JANTXV2N6794 Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor 2N6794TXV vs JANTXV2N6794
2N6794 Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Infineon Technologies AG 2N6794TXV vs 2N6794
2N6794R1 Power Field-Effect Transistor, 1.5A I(D), 500V, 3.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors 2N6794TXV vs 2N6794R1
IRFF420R1 Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6794TXV vs IRFF420R1
IRFF420 Power Field-Effect Transistor, 1.6A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Fairchild Semiconductor Corporation 2N6794TXV vs IRFF420
JANTX2N6794 Power Field-Effect Transistor, 1.5A I(D), 500V, 3.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier 2N6794TXV vs JANTX2N6794

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