There are no models available for this part yet.
Overview of 2N6806PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
CAD Models for 2N6806PBF by International Rectifier
Part Data Attributes for 2N6806PBF by International Rectifier
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
|
Package Description
|
FLANGE MOUNT, O-MBFM-P2
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
66 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE
|
|
DS Breakdown Voltage-Min
|
200 V
|
|
Drain Current-Max (ID)
|
6.5 A
|
|
Drain-source On Resistance-Max
|
0.8 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-204AA
|
|
JESD-30 Code
|
O-MBFM-P2
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
METAL
|
|
Package Shape
|
ROUND
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation Ambient-Max
|
75 W
|
|
Pulsed Drain Current-Max (IDM)
|
28 A
|
|
Qualification Status
|
Not Qualified
|
|
Reference Standard
|
MILITARY STANDARD (USA)
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
PIN/PEG
|
|
Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
180 ns
|
|
Turn-on Time-Max (ton)
|
150 ns
|
Alternate Parts for 2N6806PBF
This table gives cross-reference parts and alternative options found for 2N6806PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6806PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTX2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | Microsemi Corporation | 2N6806PBF vs JANTX2N6806 |
| JANHCA2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | 2N6806PBF vs JANHCA2N6806 |
| IRF9230 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | 2N6806PBF vs IRF9230 |
| IRF9230R1 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6806PBF vs IRF9230R1 |
| JANTXV2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | 2N6806PBF vs JANTXV2N6806 |
| IRF9230 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6806PBF vs IRF9230 |
| 2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Infineon Technologies AG | 2N6806PBF vs 2N6806 |
| IRF9230R1 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | TT Electronics Resistors | 2N6806PBF vs IRF9230R1 |
| JANTXV2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | Microsemi Corporation | 2N6806PBF vs JANTXV2N6806 |
| IRF9230 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | 2N6806PBF vs IRF9230 |