2N6845-JQR-B
Description: Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

Overview of 2N6845-JQR-B by TT Electronics Resistors

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Part Data Attributes for 2N6845-JQR-B by TT Electronics Resistors

2N6845-JQR-B
TT Electronics Resistors
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
4 A
Drain-source On Resistance-Max
0.69 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
16 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Want to compare parts?
  1. 2N6845-JQR-B
    TT Electronics Resistors
    Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
    VS

Alternate Parts for 2N6845-JQR-B

This table gives cross-reference parts and alternative options found for 2N6845-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6845-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6845 Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Infineon Technologies AG 2N6845-JQR-B vs 2N6845
2N6845-JQR Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6845-JQR-B vs 2N6845-JQR
JANS2N6845 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Infineon Technologies AG 2N6845-JQR-B vs JANS2N6845
2N6845R1 4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6845-JQR-B vs 2N6845R1
JANS2N6845 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 International Rectifier 2N6845-JQR-B vs JANS2N6845
JANTX2N6845 Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG 2N6845-JQR-B vs JANTX2N6845
JANTXV2N6845 Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation 2N6845-JQR-B vs JANTXV2N6845
2N6845 Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6845-JQR-B vs 2N6845
2N6845-JQR-A Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6845-JQR-B vs 2N6845-JQR-A
2N6845-JQRE1 4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6845-JQR-B vs 2N6845-JQRE1
Part Number Description Manufacturer Compare
IRFF9222 Power Field-Effect Transistor, 2A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier 2N6845-JQR-B vs IRFF9222
IRFF9210R1 1.5A, 200V, 3.45ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6845-JQR-B vs IRFF9210R1
IRFF9122 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier 2N6845-JQR-B vs IRFF9122
2N6845PBF Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier 2N6845-JQR-B vs 2N6845PBF
JANTXV2N6845 Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Defense Logistics Agency 2N6845-JQR-B vs JANTXV2N6845
IRFF9120PBF Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier 2N6845-JQR-B vs IRFF9120PBF
IRFF9123 3.5A, 80V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC 2N6845-JQR-B vs IRFF9123
IRFF9122 3.5A, 100V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6845-JQR-B vs IRFF9122
IRFF9210PBF Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG 2N6845-JQR-B vs IRFF9210PBF
IRFF9123 Power Field-Effect Transistor, 3.5A I(D), 80V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor 2N6845-JQR-B vs IRFF9123

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