Datasheets
2N6851PBF by: International Rectifier

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for 2N6851PBF by International Rectifier

Overview of 2N6851PBF by International Rectifier

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Applications Industrial Automation

Part Details for 2N6851PBF

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2N6851PBF Part Data Attributes:

2N6851PBF International Rectifier
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2N6851PBF International Rectifier Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 75 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 25 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 180 ns
Turn-on Time-Max (ton) 150 ns

Alternate Parts for 2N6851PBF

This table gives cross-reference parts and alternative options found for 2N6851PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6851PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Temic Semiconductors 2N6851PBF vs 2N6851
IRFF9230 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier 2N6851PBF vs IRFF9230
JANTXV2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.83ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Semicoa Semiconductors 2N6851PBF vs JANTXV2N6851
IRFF9230-JQR-BR1 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6851PBF vs IRFF9230-JQR-BR1
IRFF9230-JQR-BR1 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6851PBF vs IRFF9230-JQR-BR1
IRFF9230-JQR-B Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6851PBF vs IRFF9230-JQR-B
JANS2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG 2N6851PBF vs JANS2N6851
2N6851R1 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited 2N6851PBF vs 2N6851R1
JANTX2N6851 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation 2N6851PBF vs JANTX2N6851
2N6851R1 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6851PBF vs 2N6851R1
Part Number Description Manufacturer Compare
2N6851TX Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier 2N6851PBF vs 2N6851TX
JAN2N6851 Power Field-Effect Transistor Harris Semiconductor 2N6851PBF vs JAN2N6851
2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Temic Semiconductors 2N6851PBF vs 2N6851
JANS2N6851 Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN Harris Semiconductor 2N6851PBF vs JANS2N6851
JANS2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier 2N6851PBF vs JANS2N6851
JANTX2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier 2N6851PBF vs JANTX2N6851
JANTX2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG 2N6851PBF vs JANTX2N6851
JANTXV2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier 2N6851PBF vs JANTXV2N6851
JANTXV2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.83ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Semicoa Semiconductors 2N6851PBF vs JANTXV2N6851
IRFF9230-JQR-B Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors 2N6851PBF vs IRFF9230-JQR-B

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