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2N7000 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for 2N7000 by Unisonic Technologies Co Ltd

Overview of 2N7000 by Unisonic Technologies Co Ltd

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Part Details for 2N7000

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2N7000 Part Data Attributes

2N7000 Unisonic Technologies Co Ltd
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2N7000 Unisonic Technologies Co Ltd Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 0.115 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.4 W
Surface Mount NO

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