Part Details for 2N7000 by Motorola Mobility LLC
Overview of 2N7000 by Motorola Mobility LLC
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for 2N7000
2N7000 CAD Models
2N7000 Part Data Attributes
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2N7000
Motorola Mobility LLC
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Datasheet
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2N7000
Motorola Mobility LLC
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-226AA, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Part Package Code | TO-92 | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.35 W | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7000
This table gives cross-reference parts and alternative options found for 2N7000. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7000, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7000_D26Z | N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/TAPE REEL | Fairchild Semiconductor Corporation | 2N7000 vs 2N7000_D26Z |
| 2N7000G4 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, | TT Electronics Resistors | 2N7000 vs 2N7000G4 |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, | TT Electronics Resistors | 2N7000 vs 2N7000 |
| 2N7000BU | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN | Rochester Electronics LLC | 2N7000 vs 2N7000BU |
| SN7000 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Siemens | 2N7000 vs SN7000 |
| 2N7000D26Z | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Fairchild Semiconductor Corporation | 2N7000 vs 2N7000D26Z |
| SN7000E6296 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Siemens | 2N7000 vs SN7000E6296 |
| 2N7000-G | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Microchip Technology Inc | 2N7000 vs 2N7000-G |
| 2N7000TA | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN | Rochester Electronics LLC | 2N7000 vs 2N7000TA |
| 2N7000 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | TT Electronics Power and Hybrid / Semelab Limited | 2N7000 vs 2N7000 |