Part Details for 2N7000T/R by Philips Semiconductors
Overview of 2N7000T/R by Philips Semiconductors
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Part Details for 2N7000T/R
2N7000T/R CAD Models
2N7000T/R Part Data Attributes
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2N7000T/R
Philips Semiconductors
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Datasheet
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2N7000T/R
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 0.2 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |