Part Details for 2N7002,215 by NXP Semiconductors
Results Overview of 2N7002,215 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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2N7002,215 Information
2N7002,215 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002,215
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 500 |
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RFQ |
US Tariff Estimator: 2N7002,215 by NXP Semiconductors
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for 2N7002,215
2N7002,215 Part Data Attributes
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2N7002,215
NXP Semiconductors
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Datasheet
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2N7002,215
NXP Semiconductors
2N7002 - 60 V, 300 mA N-channel Trench MOSFET TO-236 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Part Package Code | TO-236 | |
| Package Description | Plastic, Sot-23, 3 Pin | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT23 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | Logic Level Compatible | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for 2N7002,215
This table gives cross-reference parts and alternative options found for 2N7002,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RK7002T106 | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002,215 vs RK7002T106 |
| 2N7002 | NXP Semiconductors | Check for Price | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | 2N7002,215 vs 2N7002 |
| 2N7002KA | NXP Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 2N7002,215 vs 2N7002KA |
| 2N7002TA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002,215 vs 2N7002TA |
| 2N7002 | InterFET Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | 2N7002,215 vs 2N7002 |
| 2N7002 | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002,215 vs 2N7002 |
| 2N7002KA | KEC | Check for Price | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002,215 vs 2N7002KA |
| 2N7002LT7H | onsemi | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 2N7002,215 vs 2N7002LT7H |
| 2N7002TRL13 | NXP Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002,215 vs 2N7002TRL13 |
| 2N7002 | Vishay Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, PLASTIC, SOT-23, 3 PIN | 2N7002,215 vs 2N7002 |
2N7002,215 Frequently Asked Questions (FAQ)
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The 2N7002 is a low-power, low-voltage N-channel MOSFET, and it's not designed for high-frequency operation. However, it can be used in switching applications up to 100 kHz.
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To ensure the 2N7002 is fully turned on, you need to apply a gate-source voltage (Vgs) of at least 4.5V, and the gate current should be limited to 10mA or less.
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The maximum power dissipation of the 2N7002 is 1.4W at a junction temperature of 25°C. However, this value can be derated based on the ambient temperature and the thermal resistance of the package.
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While the 2N7002 can handle up to 1.5A of continuous drain current, it's not recommended for high-current applications due to its relatively high on-state resistance (Rds(on)) of 2.5 ohms. A more suitable MOSFET with a lower Rds(on) would be a better choice.
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To protect the 2N7002 from ESD, handle the device by the body, not the leads. Use an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. Also, avoid touching the device's pins or leads with your bare hands.