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Part Details for 2N7002BKMB,315 by Nexperia
Overview of 2N7002BKMB,315 by Nexperia
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 2N7002BKMB,315
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2114779
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 5 Container: Each | 0 |
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$0.0868 / $0.1442 | Buy Now |
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DISTI #
2114779
|
Farnell | MOSFET, N-CH, 60V, 450MA, SOT883B RoHS: Compliant Min Qty: 5 Lead time: 15 Weeks, 1 Days Container: Each | 0 |
|
$0.1176 / $0.1414 | Buy Now |
Part Details for 2N7002BKMB,315
2N7002BKMB,315 CAD Models
2N7002BKMB,315 Part Data Attributes
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2N7002BKMB,315
Nexperia
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Datasheet
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2N7002BKMB,315
Nexperia
2N7002BKMB - 60 V, single N-channel Trench MOSFET@en-us DFN 3-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | DFN | |
| Package Description | DFN1006B-3, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT883B | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.45 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PBCC-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |