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Part Details for 2N7002K-AU_R1_000A2 by PanJit Semiconductor
Overview of 2N7002K-AU_R1_000A2 by PanJit Semiconductor
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
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Renewable Energy
Automotive
Price & Stock for 2N7002K-AU_R1_000A2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
241-2N7002KAUR1000A2
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Mouser Electronics | MOSFET 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant | 11085 |
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$0.0190 / $0.2000 | Buy Now |
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DISTI #
2N7002K-AU-R1
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TME | Transistor: N-MOSFET, unipolar, 60V, 300mA, Idm: 2A, 500mW, SOT23 Min Qty: 20 | 2795 |
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$0.0221 / $0.0391 | Buy Now |
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NAC | 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel | 5861651 |
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$0.0180 / $0.0200 | Buy Now |
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DISTI #
2N7002K-AU_R1_000A2
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Avnet Asia | Transistor MOSFET N-CH 60V 300mA 3-Pin SOT-23 T/R (Alt: 2N7002K-AU_R1_000A2) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 52 Weeks, 1 Days | 0 |
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RFQ | |
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DISTI #
2N7002K-AU_R1_000A2
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Avnet Silica | Transistor MOSFET N-CH 60V 300mA 3-Pin SOT-23 T/R (Alt: 2N7002K-AU_R1_000A2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days | Silica - 63000 |
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Buy Now |
Part Details for 2N7002K-AU_R1_000A2
2N7002K-AU_R1_000A2 CAD Models
2N7002K-AU_R1_000A2 Part Data Attributes
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2N7002K-AU_R1_000A2
PanJit Semiconductor
Buy Now
Datasheet
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Compare Parts:
2N7002K-AU_R1_000A2
PanJit Semiconductor
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2018-10-01 | |
| Samacsys Manufacturer | PANJIT | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.3 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002K-AU_R1_000A2
This table gives cross-reference parts and alternative options found for 2N7002K-AU_R1_000A2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002K-AU_R1_000A2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7002K | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Formosa Microsemi Co Ltd | 2N7002K-AU_R1_000A2 vs 2N7002K |
| 2N7002K-T1-GE3 | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND LEAD FREE PACKAGE-3, FET General Purpose Small Signal | Vishay Siliconix | 2N7002K-AU_R1_000A2 vs 2N7002K-T1-GE3 |
| 2N7002K-7 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | 2N7002K-AU_R1_000A2 vs 2N7002K-7 |
| 2N7002K-H | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Formosa Microsemi Co Ltd | 2N7002K-AU_R1_000A2 vs 2N7002K-H |
| 2N7002K-AU_R1_000A1 | Small Signal Field-Effect Transistor, | PanJit Semiconductor | 2N7002K-AU_R1_000A2 vs 2N7002K-AU_R1_000A1 |
| 2N7002K_R2_00001 | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | PanJit Semiconductor | 2N7002K-AU_R1_000A2 vs 2N7002K_R2_00001 |
| 2N7002K,215 | TRANSISTOR 340 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | NXP Semiconductors | 2N7002K-AU_R1_000A2 vs 2N7002K,215 |
| 2N7002K | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3 | Suzhou Good-Ark Electronics Co Ltd | 2N7002K-AU_R1_000A2 vs 2N7002K |
| 2N7002K-T1-E3 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN | Vishay Intertechnologies | 2N7002K-AU_R1_000A2 vs 2N7002K-T1-E3 |
| 2N7002K | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | PanJit Semiconductor | 2N7002K-AU_R1_000A2 vs 2N7002K |