Datasheets
2SC2510 by: Toshiba America Electronic Components

TRANSISTOR HF BAND, Si, NPN, RF POWER TRANSISTOR, 2-13B1A, 4 PIN, BIP RF Power

Part Details for 2SC2510 by Toshiba America Electronic Components

Overview of 2SC2510 by Toshiba America Electronic Components

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for 2SC2510

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2SC2510 Part Data Attributes

2SC2510 Toshiba America Electronic Components
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2SC2510 Toshiba America Electronic Components TRANSISTOR HF BAND, Si, NPN, RF POWER TRANSISTOR, 2-13B1A, 4 PIN, BIP RF Power
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, O-CRFM-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Toshiba
Collector Current-Max (IC) 20 A
Collector-Base Capacitance-Max 600 pF
Collector-Emitter Voltage-Max 35 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 250 W
Power Dissipation-Max (Abs) 250 W
Power Gain-Min (Gp) 12.2 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for 2SC2510

This table gives cross-reference parts and alternative options found for 2SC2510. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC2510, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLW76 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-121B, 4 PIN, BIP RF Power NXP Semiconductors 2SC2510 vs BLW76
MS1077 RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M174, 4 PIN Advanced Power Technology 2SC2510 vs MS1077
HF75-28F RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc 2SC2510 vs HF75-28F
SD1407 RF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, FM-4 Advanced Semiconductor Inc 2SC2510 vs SD1407
HF100-28 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4 Advanced Semiconductor Inc 2SC2510 vs HF100-28
MRF464 Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC 2SC2510 vs MRF464
BLW76 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc 2SC2510 vs BLW76
SD1407 HF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M174, FM-4 STMicroelectronics 2SC2510 vs SD1407
BLW77 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-121B, 4 PIN, BIP RF Power NXP Semiconductors 2SC2510 vs BLW77
MS1000 RF Power Bipolar Transistor, 1-Element, Silicon, NPN, M174, 4 PIN Microsemi Corporation 2SC2510 vs MS1000

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