Datasheets
2SC2905 by:

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC, FM-6

Part Details for 2SC2905 by Mitsubishi Electric

Overview of 2SC2905 by Mitsubishi Electric

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Part Details for 2SC2905

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2SC2905 Part Data Attributes

2SC2905 Mitsubishi Electric
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2SC2905 Mitsubishi Electric RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC, FM-6
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-CDFM-F6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection EMITTER
Collector Current-Max (IC) 15 A
Collector-Emitter Voltage-Max 17 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 120 W
Power Dissipation-Max (Abs) 120 W
Power Gain-Min (Gp) 4.8 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for 2SC2905

This table gives cross-reference parts and alternative options found for 2SC2905. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC2905, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SC2905 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc 2SC2905 vs 2SC2905
Part Number Description Manufacturer Compare
MRF648 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc 2SC2905 vs MRF648
SD1434 UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M111, FM-6 STMicroelectronics 2SC2905 vs SD1434
ULBM45 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, 6L, FM-6 Advanced Semiconductor Inc 2SC2905 vs ULBM45
MS1480 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M111, 6 PIN Microsemi Corporation 2SC2905 vs MS1480
MRF648 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC 2SC2905 vs MRF648
MRF646 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC 2SC2905 vs MRF646
MRF648 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products 2SC2905 vs MRF648
BLU60/12 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, FM-6, BIP RF Power NXP Semiconductors 2SC2905 vs BLU60/12
NTE367 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, W65, 4 PIN NTE Electronics Inc 2SC2905 vs NTE367
SD1434 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc 2SC2905 vs SD1434

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