Part Details for 2SC3102 by Mitsubishi Electric
Overview of 2SC3102 by Mitsubishi Electric
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for 2SC3102
2SC3102 CAD Models
2SC3102 Part Data Attributes
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2SC3102
Mitsubishi Electric
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Datasheet
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2SC3102
Mitsubishi Electric
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC, FM-6
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-CDFM-F6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | EMITTER | |
Collector Current-Max (IC) | 18 A | |
Collector-Emitter Voltage-Max | 17 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 170 W | |
Power Dissipation-Max (Abs) | 170 W | |
Power Gain-Min (Gp) | 4.8 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for 2SC3102
This table gives cross-reference parts and alternative options found for 2SC3102. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC3102, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NTE367 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, W65, 4 PIN | NTE Electronics Inc | 2SC3102 vs NTE367 |
MRF658 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | Motorola Semiconductor Products | 2SC3102 vs MRF658 |
2SC2905 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | Advanced Semiconductor Inc | 2SC3102 vs 2SC2905 |
SD1434 | UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M111, FM-6 | STMicroelectronics | 2SC3102 vs SD1434 |
MS1480 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, 6 PIN | Advanced Power Technology | 2SC3102 vs MS1480 |
MS1480 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M111, 6 PIN | Microsemi Corporation | 2SC3102 vs MS1480 |
SD1434 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | Advanced Semiconductor Inc | 2SC3102 vs SD1434 |
MRF646 | UHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | 2SC3102 vs MRF646 |
MS1490 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, 6 PIN | Advanced Power Technology | 2SC3102 vs MS1490 |
NTE368 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | NTE Electronics Inc | 2SC3102 vs NTE368 |