Datasheets
2SD1624R by:

Small Signal Bipolar Transistor,

Part Details for 2SD1624R by Galaxy Microelectronics

Overview of 2SD1624R by Galaxy Microelectronics

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Part Details for 2SD1624R

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2SD1624R Part Data Attributes

2SD1624R Galaxy Microelectronics
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2SD1624R Galaxy Microelectronics Small Signal Bipolar Transistor,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description ,
Reach Compliance Code unknown
Collector Current-Max (IC) 3 A
Collector-Base Capacitance-Max 39 pF
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.5 W
Power Dissipation-Max (Abs) 1.5 W
Surface Mount YES
Terminal Form FLAT
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 150 MHz
VCEsat-Max 0.7 V

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