Part Details for 2SJ266-DR by SANYO Electric Co Ltd
Overview of 2SJ266-DR by SANYO Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SJ266-DR
2SJ266-DR CAD Models
2SJ266-DR Part Data Attributes:
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2SJ266-DR
SANYO Electric Co Ltd
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Datasheet
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2SJ266-DR
SANYO Electric Co Ltd
8A, 60V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SANYO ELECTRIC CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 50 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for 2SJ266-DR
This table gives cross-reference parts and alternative options found for 2SJ266-DR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ266-DR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SJ266DR | Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | 2SJ266-DR vs 2SJ266DR |