Part Details for 2SJ469 by SANYO Electric Co Ltd
Overview of 2SJ469 by SANYO Electric Co Ltd
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for 2SJ469
2SJ469 CAD Models
2SJ469 Part Data Attributes
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2SJ469
SANYO Electric Co Ltd
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Datasheet
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2SJ469
SANYO Electric Co Ltd
Power Field-Effect Transistor, 5A I(D), 30V, 0.16ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, 1.60 MM HEIGHT, SOP-8
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SANYO ELECTRIC CO LTD | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SJ469
This table gives cross-reference parts and alternative options found for 2SJ469. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ469, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PHN210T | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power | NXP Semiconductors | 2SJ469 vs PHN210T |
| FDS8947A | Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | 2SJ469 vs FDS8947A |
| HUF76105DK8 | Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Harris Semiconductor | 2SJ469 vs HUF76105DK8 |
| F5H3ND | Power Field-Effect Transistor, 5A I(D), 30V, 0.07ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Shindengen Electronic Manufacturing Co Ltd | 2SJ469 vs F5H3ND |
| NDS9956AD84Z | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | 2SJ469 vs NDS9956AD84Z |
| IRF7706PBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 | International Rectifier | 2SJ469 vs IRF7706PBF |
| BSO305N | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Infineon Technologies AG | 2SJ469 vs BSO305N |
| NDS9953A | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | 2SJ469 vs NDS9953A |
| HAT1036R | 12A, 30V, 0.034ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | 2SJ469 vs HAT1036R |
| NDS9956A_NL | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8 | Fairchild Semiconductor Corporation | 2SJ469 vs NDS9956A_NL |