Transistors
2SK2221-E
Renesas Electronics Corporation
Description: N Channel MOSFET, TO-3P, /Tube

Overview of 2SK2221-E by Renesas Electronics Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
2SK2221-E Renesas Electronics Corporation N Channel MOSFET, TO-3P, /Tube

Price & Stock for 2SK2221-E by Renesas Electronics Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 2SK2221-E-ND
DigiKey MOSFET N-CH 200V 8A TO3P Lead time: 36 Weeks Container: Tray Temporarily Out of Stock
Buy Now
DISTI # 2SK2221-E
Avnet Asia Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-3P Tube (Alt: 2SK2221-E) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 18 Weeks, 0 Days 0
RFQ
DISTI # 2SK2221-E
Avnet Silica Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-3P Tube (Alt: 2SK2221-E) RoHS: Compliant Min Qty: 2880 Package Multiple: 2880 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now

CAD Models for 2SK2221-E by Renesas Electronics Corporation
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Part Data Attributes for 2SK2221-E by Renesas Electronics Corporation

2SK2221-E
Renesas Electronics Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Part Package Code
TO-3P
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
4
Manufacturer Package Code
PRSS0004ZE
Reach Compliance Code
compliant
ECCN Code
EAR99
Date Of Intro
1997-08-01
Samacsys Manufacturer
Renesas Electronics
Case Connection
SOURCE
Configuration
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
8 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. 2SK2221-E
    Renesas Electronics Corporation
    N Channel MOSFET, TO-3P, /Tube
    VS

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