Datasheets
2SK2430TR by: ROHM Semiconductor

Power Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for 2SK2430TR by ROHM Semiconductor

Overview of 2SK2430TR by ROHM Semiconductor

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Part Details for 2SK2430TR

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2SK2430TR Part Data Attributes

2SK2430TR ROHM Semiconductor
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2SK2430TR ROHM Semiconductor Power Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK2430TR

This table gives cross-reference parts and alternative options found for 2SK2430TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2430TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK2430 Power Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ROHM Semiconductor 2SK2430TR vs 2SK2430
Part Number Description Manufacturer Compare
IRFR222 Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor 2SK2430TR vs IRFR222
2SK215 0.5A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation 2SK2430TR vs 2SK215
FQU5N20TU Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation 2SK2430TR vs FQU5N20TU
2SK1335(S)TL Power Field-Effect Transistor, 3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd 2SK2430TR vs 2SK1335(S)TL
2SK1195 Power Field-Effect Transistor, 1.5A I(D), 230V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Shindengen Electronic Manufacturing Co Ltd 2SK2430TR vs 2SK1195
2SK2887 Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHM Semiconductor 2SK2430TR vs 2SK2887
FQD7N20L Power Field-Effect Transistor, 5.5A I(D), 200V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 2SK2430TR vs FQD7N20L
2SK214 0.5A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation 2SK2430TR vs 2SK214
FQD4N20 Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation 2SK2430TR vs FQD4N20
MTD2N20 2A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Motorola Mobility LLC 2SK2430TR vs MTD2N20

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