Datasheets
2SK3062-ZJ by:

Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN

Part Details for 2SK3062-ZJ by NEC Electronics Group

Overview of 2SK3062-ZJ by NEC Electronics Group

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for 2SK3062-ZJ

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2SK3062-ZJ Part Data Attributes

2SK3062-ZJ NEC Electronics Group
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2SK3062-ZJ NEC Electronics Group Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NEC ELECTRONICS CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 122.5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 280 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK3062-ZJ

This table gives cross-reference parts and alternative options found for 2SK3062-ZJ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3062-ZJ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQPF10N60C 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Rochester Electronics LLC 2SK3062-ZJ vs FQPF10N60C
FDU6644 67A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 Rochester Electronics LLC 2SK3062-ZJ vs FDU6644
SSS6N70A 4A, 700V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC 2SK3062-ZJ vs SSS6N70A
2SK3461S 85A, 60V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation 2SK3062-ZJ vs 2SK3461S
FQP5P20 4.8A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC 2SK3062-ZJ vs FQP5P20
FQAF17N40 12.2A, 400V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN Rochester Electronics LLC 2SK3062-ZJ vs FQAF17N40
SPB30N03L Power Field-Effect Transistor, 30A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens 2SK3062-ZJ vs SPB30N03L
FDD26AN06A0 7A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC 2SK3062-ZJ vs FDD26AN06A0
IRFAC30 3.6A, 600V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC 2SK3062-ZJ vs IRFAC30
IRFIP440 Power Field-Effect Transistor, 6.4A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 International Rectifier 2SK3062-ZJ vs IRFIP440

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