Part Details for 2SK3564 by Toshiba America Electronic Components
Overview of 2SK3564 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK3564
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2SK3564
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TME | Transistor: N-MOSFET, unipolar, 900V, 3A, 40W, TO220FP Min Qty: 1 | 138 |
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$0.8900 / $1.2500 | Buy Now |
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ComSIT USA | SILICON N CHANNEL MOS TYPE (PI-MOSIV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 3A I(D), 900V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ |
Part Details for 2SK3564
2SK3564 CAD Models
2SK3564 Part Data Attributes
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2SK3564
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SK3564
Toshiba America Electronic Components
TRANSISTOR 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SC-67 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 408 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 4.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 9 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK3564
This table gives cross-reference parts and alternative options found for 2SK3564. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3564, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK2480-AZ | Silicon N Channel MOSFET, MP-45F, /Bag | Renesas Electronics Corporation | 2SK3564 vs 2SK2480-AZ |
2SK2480-AZ | Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, MP-45F, ISOLATED TO-220, 3 PIN | NEC Electronics Group | 2SK3564 vs 2SK2480-AZ |
2SK2480 | 3A, 900V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, MP-45F, ISOLATED TO-220, 3 PIN | Renesas Electronics Corporation | 2SK3564 vs 2SK2480 |