Part Details for 2SK538 by Toshiba America Electronic Components
Overview of 2SK538 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2SK538
2SK538 CAD Models
2SK538 Part Data Attributes:
|
|
2SK538
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
2SK538
Toshiba America Electronic Components
TRANSISTOR 3 A, 900 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK538
This table gives cross-reference parts and alternative options found for 2SK538. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK538, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK3415LS | Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | 2SK538 vs 2SK3415LS |
| 2SK672 | TRANSISTOR 10 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | Toshiba America Electronic Components | 2SK538 vs 2SK672 |
| 2SK1257 | Power Field-Effect Transistor, 40A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(A), 3 PIN | Panasonic Electronic Components | 2SK538 vs 2SK1257 |
| 2SK3888-01MR | Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fuji Electric Co Ltd | 2SK538 vs 2SK3888-01MR |
| 2SK1352 | TRANSISTOR 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | 2SK538 vs 2SK1352 |
| 2SK2340 | Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220E, 3 PIN | Panasonic Electronic Components | 2SK538 vs 2SK2340 |
| SML5020BVR | 26A, 0.2ohm, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | 2SK538 vs SML5020BVR |
| 2SK1997 | TRANSISTOR 36 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | 2SK538 vs 2SK1997 |
| 2SK1457 | Power Field-Effect Transistor, 5A I(D), 900V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, SC-46, 3 PIN | SANYO Electric Co Ltd | 2SK538 vs 2SK1457 |
| 2SK1539 | Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | 2SK538 vs 2SK1539 |