There are no models available for this part yet.
Overview of 2SK896 by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2SK896 by Toshiba America Electronic Components
Part Data Attributes for 2SK896 by Toshiba America Electronic Components
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|---|---|
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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TOSHIBA CORP
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Package Description
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FLANGE MOUNT, R-PSFM-T3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Case Connection
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DRAIN
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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500 V
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Drain Current-Max (ID)
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12 A
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Drain-source On Resistance-Max
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0.6 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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125 W
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for 2SK896
This table gives cross-reference parts and alternative options found for 2SK896. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK896, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTW7N80E | 7A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | 2SK896 vs MTW7N80E |
| SSF17N60A | Power Field-Effect Transistor, 9A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Samsung Semiconductor | 2SK896 vs SSF17N60A |
| STW9NA80 | 9.1A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | 2SK896 vs STW9NA80 |
| FS10SM-16A | Power Field-Effect Transistor, 10A I(D), 800V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Powerex Power Semiconductors | 2SK896 vs FS10SM-16A |
| 2SK2078 | TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK896 vs 2SK2078 |
| BUZ305 | Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN | Siemens | 2SK896 vs BUZ305 |
| FS14UM-10 | 14A, 500V, 0.64ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Renesas Electronics Corporation | 2SK896 vs FS14UM-10 |
| FS14UM-10 | Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Powerex Power Semiconductors | 2SK896 vs FS14UM-10 |
| SSH12N80 | Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SK896 vs SSH12N80 |
| SSH17N60A | Power Field-Effect Transistor, 17A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | 2SK896 vs SSH17N60A |