Part Details for 2MBI1400VXB-120P-50 by Fuji Electric Co Ltd
Overview of 2MBI1400VXB-120P-50 by Fuji Electric Co Ltd
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Price & Stock for 2MBI1400VXB-120P-50
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54W0209
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Newark | Igbt, Module, Dual N Channel, 1.2Kv, 1.8Ka, Continuous Collector Current:1.8Ka, Collector Emitter Saturation Voltage:1.75V, Power Dissipation:7.65Kw, Operating Temperature Max:150°C, Igbt Termination:Stud, Transistor Mounting:Panel |Fuji Electric 2MBI1400VXB-120P-50 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for 2MBI1400VXB-120P-50
2MBI1400VXB-120P-50 CAD Models
2MBI1400VXB-120P-50 Part Data Attributes
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2MBI1400VXB-120P-50
Fuji Electric Co Ltd
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Datasheet
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2MBI1400VXB-120P-50
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 1800A I(C), 1200V V(BR)CES
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | FUJI ELECTRIC | |
| Collector Current-Max (IC) | 1800 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| VCEsat-Max | 2.2 V |