Part Details for 2MBI800U4G-120 by Fuji Electric Co Ltd
Overview of 2MBI800U4G-120 by Fuji Electric Co Ltd
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2MBI800U4G-120
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54W0213
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Newark | Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka, Continuous Collector Current:1.2Ka, Collector Emitter Saturation Voltage:2.12V, Power Dissipation:4.8Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Transistor Mounting:Panel |Fuji Electric 2MBI800U4G-120 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Bristol Electronics | 2 |
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RFQ |
Part Details for 2MBI800U4G-120
2MBI800U4G-120 CAD Models
2MBI800U4G-120 Part Data Attributes:
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2MBI800U4G-120
Fuji Electric Co Ltd
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Datasheet
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2MBI800U4G-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, M248, 10 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Package Description | FLANGE MOUNT, R-XUFM-X10 | |
| Pin Count | 10 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | FUJI ELECTRIC | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 800 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X10 | |
| Number of Elements | 2 | |
| Number of Terminals | 10 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 4800 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1450 ns | |
| Turn-on Time-Nom (ton) | 3100 ns | |
| VCEsat-Max | 2.29 V |