Part Details for 2N2369 by New England Semiconductor
Overview of 2N2369 by New England Semiconductor
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Part Details for 2N2369
2N2369 CAD Models
2N2369 Part Data Attributes
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2N2369
New England Semiconductor
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Datasheet
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2N2369
New England Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Package Description | TO-18, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.2 A | |
Collector-Base Capacitance-Max | 4 pF | |
Collector-Emitter Voltage-Max | 15 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-18 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 500 MHz | |
VCEsat-Max | 0.25 V |