2N3030
Description: Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18

Overview of 2N3030 by Microsemi Corporation

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Part Data Attributes for 2N3030 by Microsemi Corporation

2N3030
Microsemi Corporation
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.30.00.80
Circuit Commutated Turn-off Time-Nom
0.7 µs
Configuration
SINGLE
Critical Rate of Rise of Off-State Voltage-Min
30 V/us
DC Gate Trigger Current-Max
0.02 mA
DC Gate Trigger Voltage-Max
0.6 V
Holding Current-Max
4 mA
JEDEC-95 Code
TO-18
JESD-30 Code
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Qualification Status
Not Qualified
RMS On-state Current-Max
0.785 A
Repetitive Peak Off-state Leakage Current-Max
0.1 µA
Repetitive Peak Off-state Voltage
30 V
Repetitive Peak Reverse Voltage
30 V
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
Terminal Position
BOTTOM
Trigger Device Type
SCR
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  1. 2N3030
    Microsemi Corporation
    Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18
    VS

Alternate Parts for 2N3030

This table gives cross-reference parts and alternative options found for 2N3030. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3030, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N3030 Silicon Controlled Rectifier, 0.785A I(T)RMS, 500mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18, Unitrode Corp (RETIRED) 2N3030 vs JANTX2N3030
2N3030 Silicon Controlled Rectifier, 0.785A I(T)RMS, 500mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18, Unitrode Corp (RETIRED) 2N3030 vs 2N3030
JAN2N3030 Silicon Controlled Rectifier, 0.785A I(T)RMS, 500mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18, Unitrode Corp (RETIRED) 2N3030 vs JAN2N3030
JAN2N3030 Silicon Controlled Rectifier Microsemi Corporation 2N3030 vs JAN2N3030
JANTX2N3030 Silicon Controlled Rectifier Microsemi Corporation 2N3030 vs JANTX2N3030
Part Number Description Manufacturer Compare
2N1803 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN International Rectifier 2N3030 vs 2N1803
2N1599 1.6A, 400V, SCR, TO-205AD Motorola Mobility LLC 2N3030 vs 2N1599
S2514BH 25A, 200V, SCR, TO-220AB STMicroelectronics 2N3030 vs S2514BH
2N1772A Silicon Controlled Rectifier, 7.4A I(T)RMS, 100V V(RRM), 1 Element, TO-64, TO-64, 2 PIN Ge Solid State 2N3030 vs 2N1772A
2N5724 Silicon Controlled Rectifier, 2.512A I(T)RMS, 390mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-205AD, Unitrode Corp (RETIRED) 2N3030 vs 2N5724
TYS406-1 4A, 100V, SCR, TO-220AB STMicroelectronics 2N3030 vs TYS406-1
S0301LS3 Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 30V V(DRM), 1 Element, TO-220AB Loras Industries Inc 2N3030 vs S0301LS3
IS112 Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Hutson Industries 2N3030 vs IS112
BT150M-500R Silicon Controlled Rectifier, 4 A, 500 V, SCR, PLASTIC PACKAGE-3 NXP Semiconductors 2N3030 vs BT150M-500R
S307B1 Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202 Hutson Industries 2N3030 vs S307B1

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