Part Details for 2N5401 by Motorola Semiconductor Products
Overview of 2N5401 by Motorola Semiconductor Products
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for 2N5401
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 325 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, PNP Type, TO-92 | 10084 |
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$0.1400 / $0.8000 | Buy Now |
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Quest Components | Bipolar Junction Transistor, PNP Type, TO-92 | 50 |
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$1.2000 / $3.2000 | Buy Now |
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Quest Components | Bipolar Junction Transistor, PNP Type, TO-92 | 10834 |
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$0.0300 / $0.1500 | Buy Now |
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ES Components | MOT 2N5401 UNINSPECTED BARE DIE | 1228 in Stock |
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RFQ | |
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Perfect Parts Corporation | 3845 |
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RFQ |
Part Details for 2N5401
2N5401 CAD Models
2N5401 Part Data Attributes
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2N5401
Motorola Semiconductor Products
Buy Now
Datasheet
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2N5401
Motorola Semiconductor Products
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, TO-226AA, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | TO-226AA, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Collector Current-Max (IC) | 0.6 A | |
Collector-Base Capacitance-Max | 6 pF | |
Collector-Emitter Voltage-Max | 150 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 50 | |
JEDEC-95 Code | TO-226AA | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 1.5 W | |
Power Dissipation-Max (Abs) | 0.63 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz | |
VCEsat-Max | 0.5 V |