Part Details for 2N5785 by New England Semiconductor
Overview of 2N5785 by New England Semiconductor
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Part Details for 2N5785
2N5785 CAD Models
2N5785 Part Data Attributes
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2N5785
New England Semiconductor
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Datasheet
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2N5785
New England Semiconductor
Small Signal Bipolar Transistor, 3.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 3.5 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 20 | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 10 W | |
Power Dissipation-Max (Abs) | 10 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 1 MHz | |
Turn-off Time-Max (toff) | 15000 ns | |
Turn-on Time-Max (ton) | 5000 ns | |
VCEsat-Max | 2 V |