There are no models available for this part yet.
Overview of 2N5823 by Central Semiconductor Corp
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Audio and Video Systems
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Entertainment and Gaming
Price & Stock for 2N5823 by Central Semiconductor Corp
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
2N5823
|
Avnet Americas | Trans GP BJT PNP 60V 750mA 3-Pin TO-92-18R Box - Boxed Product (Development Kits) (Alt: 2N5823) Min Qty: 2000 Package Multiple: 2000 Container: Box | 0 |
|
RFQ |
CAD Models for 2N5823 by Central Semiconductor Corp
Part Data Attributes for 2N5823 by Central Semiconductor Corp
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
CENTRAL SEMICONDUCTOR CORP
|
Part Package Code
|
TO-92
|
Package Description
|
TO-92-18R, 3 PIN
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.21.00.75
|
Collector Current-Max (IC)
|
0.75 A
|
Collector-Base Capacitance-Max
|
15 pF
|
Collector-Emitter Voltage-Max
|
60 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
25
|
JEDEC-95 Code
|
TO-92
|
JESD-30 Code
|
O-PBCY-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-65 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
ROUND
|
Package Style
|
CYLINDRICAL
|
Polarity/Channel Type
|
PNP
|
Power Dissipation Ambient-Max
|
0.625 W
|
Power Dissipation-Max (Abs)
|
1.5 W
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
AMPLIFIER
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
120 MHz
|
VCEsat-Max
|
0.75 V
|