There are no models available for this part yet.
Overview of 2N6760TX by Microsemi Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for 2N6760TX by Microsemi Corporation
Part Data Attributes for 2N6760TX by Microsemi Corporation
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
MICROSEMI CORP
|
Package Description
|
FLANGE MOUNT, O-MBFM-P2
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Additional Feature
|
RADIATION HARDENED
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Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
400 V
|
Drain Current-Max (ID)
|
5.5 A
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Drain-source On Resistance-Max
|
1 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-204AA
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JESD-30 Code
|
O-MBFM-P2
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JESD-609 Code
|
e0
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Number of Elements
|
1
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Number of Terminals
|
2
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Operating Mode
|
ENHANCEMENT MODE
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Package Body Material
|
METAL
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Package Shape
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ROUND
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
|
N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
8 A
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Qualification Status
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Not Qualified
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Reference Standard
|
MILITARY STANDARD (USA)
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Surface Mount
|
NO
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Terminal Finish
|
TIN LEAD
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Terminal Form
|
PIN/PEG
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
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Alternate Parts for 2N6760TX
This table gives cross-reference parts and alternative options found for 2N6760TX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6760TX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2N6760TXV | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Microsemi Corporation | 2N6760TX vs 2N6760TXV |
JAN2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | 2N6760TX vs JAN2N6760 |
2N6760 | 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6760TX vs 2N6760 |
2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 | Microsemi Corporation | 2N6760TX vs 2N6760 |
UFN330 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | 2N6760TX vs UFN330 |
JANTX2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | 2N6760TX vs JANTX2N6760 |
IRF331 | 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | 2N6760TX vs IRF331 |
JANTX2N6760 | 5.5A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN | Intersil Corporation | 2N6760TX vs JANTX2N6760 |
JANTXV2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | Microsemi Corporation | 2N6760TX vs JANTXV2N6760 |
2N6760R1 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | 2N6760TX vs 2N6760R1 |