Part Details for 2N6767 by TT Electronics Resistors
Overview of 2N6767 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N6767
2N6767 CAD Models
2N6767 Part Data Attributes
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2N6767
TT Electronics Resistors
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Datasheet
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2N6767
TT Electronics Resistors
Power Field-Effect Transistor, 12A I(D), 350V, 5.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
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| Rohs Code | No | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 5.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6767
This table gives cross-reference parts and alternative options found for 2N6767. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6767, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| 2N6767 | Power Field-Effect Transistor, 12A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | 2N6767 vs 2N6767 |
| 2N6767 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,12A I(D),TO-3 | Intersil Corporation | 2N6767 vs 2N6767 |
| 2N6767R1 | 12A, 350V, 5.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6767 vs 2N6767R1 |
| 2N6767 | 12A, 350V, 5.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6767 vs 2N6767 |