Datasheets
2N6788 by:

Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

Part Details for 2N6788 by Infineon Technologies AG

Results Overview of 2N6788 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

2N6788 Information

2N6788 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6788

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2N6788 Part Data Attributes

2N6788 Infineon Technologies AG
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2N6788 Infineon Technologies AG Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 76 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

2N6788 Related Parts

2N6788 Frequently Asked Questions (FAQ)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin to dissipate heat efficiently. A thermal via under the device can also help to reduce thermal resistance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink or thermal interface material to reduce thermal resistance.

  • The 2N6788 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Infineon recommends using an ESD wrist strap or mat, and storing the devices in anti-static packaging.

  • Yes, the 2N6788 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.

  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to choose a gate resistor value that ensures a rise time of around 10-20 ns. Consult Infineon's application notes for more detailed guidance.

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