Datasheets
2N6788 by:

Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

Part Details for 2N6788 by International Rectifier

Results Overview of 2N6788 by International Rectifier

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2N6788 Information

2N6788 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N6788

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2N6788 Part Data Attributes

2N6788 International Rectifier
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2N6788 International Rectifier Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 76 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 110 ns

2N6788 Related Parts

2N6788 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N6788 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.

  • To ensure proper biasing, make sure to provide a stable voltage supply, and ensure the gate-source voltage (Vgs) is within the recommended range of 2-4V. Also, ensure the drain-source voltage (Vds) is within the recommended range of 10-30V.

  • The recommended gate resistor value for the 2N6788 is typically in the range of 1kΩ to 10kΩ, depending on the specific application and switching frequency.

  • Yes, the 2N6788 is suitable for high-frequency switching applications up to 100kHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and oscillations.

  • To protect the 2N6788 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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