Part Details for 2N6788 by Motorola Semiconductor Products
Results Overview of 2N6788 by Motorola Semiconductor Products
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
2N6788 Information
2N6788 by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N6788
2N6788 CAD Models
2N6788 Part Data Attributes
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2N6788
Motorola Semiconductor Products
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Datasheet
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2N6788
Motorola Semiconductor Products
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 100 pF | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 110 ns | |
| Turn-on Time-Max (ton) | 110 ns |
Alternate Parts for 2N6788
This table gives cross-reference parts and alternative options found for 2N6788. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6788, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N6788 | Motorola Mobility LLC | Check for Price | 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | 2N6788 vs 2N6788 |
| JANTX2N6788 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6788 vs JANTX2N6788 |
| IRFF120 | Rochester Electronics LLC | Check for Price | 6A, 100V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | 2N6788 vs IRFF120 |
| IRFF120-JQR-BE1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6788 vs IRFF120-JQR-BE1 |
| 2N6788 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, | 2N6788 vs 2N6788 |
| 2N6788 | Intersil Corporation | Check for Price | 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 2N6788 vs 2N6788 |
| IRFF120-JQR-BE1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6788 vs IRFF120-JQR-BE1 |
| IRFF120-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6788 vs IRFF120-JQR-B |
| 2N6788-QR-B | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6788 vs 2N6788-QR-B |
| IRFF120 | Intersil Corporation | Check for Price | 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 2N6788 vs IRFF120 |