There are no models available for this part yet.
Overview of 2N6849-JQR-A by TT Electronics Power and Hybrid / Semelab Limited
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| EV-SOMCRR-EZLITE | Analog Devices | Compact DSP SOM Carrier Evalua | |
| EV-21562-AUTO | Analog Devices | ADSP-21562 Audio Weaver Eval B | |
| ADSP-CM409CBCZAFRL | Analog Devices | ARM Cortex M4 Mixed-Signal BGA |
CAD Models for 2N6849-JQR-A by TT Electronics Power and Hybrid / Semelab Limited
Part Data Attributes for 2N6849-JQR-A by TT Electronics Power and Hybrid / Semelab Limited
|
|
|
|---|---|
|
Pbfree Code
|
No
|
|
Rohs Code
|
No
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|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
SEMELAB LTD
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|
Part Package Code
|
BCY
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|
Package Description
|
CYLINDRICAL, O-MBCY-W3
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|
Pin Count
|
2
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Additional Feature
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AVALANCHE ENERGY RATED
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Avalanche Energy Rating (Eas)
|
500 mJ
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
|
6.5 A
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Drain-source On Resistance-Max
|
0.3 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-205AF
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JESD-30 Code
|
O-MBCY-W3
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Number of Elements
|
1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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|
Package Body Material
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METAL
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|
Package Shape
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ROUND
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Package Style
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CYLINDRICAL
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|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
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P-CHANNEL
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|
Pulsed Drain Current-Max (IDM)
|
25 A
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Qualification Status
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Not Qualified
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Surface Mount
|
NO
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Terminal Form
|
WIRE
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Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
Alternate Parts for 2N6849-JQR-A
This table gives cross-reference parts and alternative options found for 2N6849-JQR-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6849-JQR-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6849 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | 2N6849-JQR-A vs 2N6849 |
| IRFF9130 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Rochester Electronics LLC | 2N6849-JQR-A vs IRFF9130 |
| IRFF9130 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | 2N6849-JQR-A vs IRFF9130 |
| JANTXV2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Microsemi Corporation | 2N6849-JQR-A vs JANTXV2N6849 |
| 2N6849-QR-B | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6849-JQR-A vs 2N6849-QR-B |
| JANS2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | 2N6849-JQR-A vs JANS2N6849 |
| JANTXV2N6849 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | 2N6849-JQR-A vs JANTXV2N6849 |
| JANTXV2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.32ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Semicoa Semiconductors | 2N6849-JQR-A vs JANTXV2N6849 |
| 2N6849TXV | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | 2N6849-JQR-A vs 2N6849TXV |
| JANTX2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | 2N6849-JQR-A vs JANTX2N6849 |